ju n . 20 1 5 . rev 1. 1 magnachip semiconductor ltd . 1 m d p 192 3 C single n - channel trench mosfet 100v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 69 a t c =1 0 0 o c 44 pulsed drain current i dm 276 power dissipation t c =25 o c p d 139 w t c =100 o c 56 single pulse avalanche energy e as (2) 72 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 62.5 o c/w thermal resistance, junction - to - case r jc 0.9 md p192 3 single n - channel trench m osfet 10 0v, 69 a, 13.9 m features ? v ds = 10 0v ? i d = 69 a @v gs = 10v ? r ds(on) < 13.9 m @v gs = 10v ? 100% uil tested ? 100% rg tested general description the md p192 3 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . mdp192 3 is suitable device for synchronous rectificat ion for server / adapter and general purpose applications. to - 220 d g s
ju n . 20 1 5 . rev 1. 1 magnachip semiconductor ltd . 2 m d p 192 3 C single n - channel trench mosfet 100v ordering information part number temp. range package packing ro hs status MDP1923 th - 55~150 o c to - 220 tube halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 drain cut - off current i dss v ds = 80 v, v gs = 0v - - 1.0 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 15 a - 10.8 13.9 m ? forward transconductance g fs v ds = 10 v, i d = 15 a - 56 - s dynamic characteristics total gate charge q g v ds = 5 0 v, i d = 25 a, v gs = 10v - 42.8 - nc gate - source charge q gs - 11.7 - gate - drain charge q gd - 8 .0 - input capacitance c iss v ds = 40 v, v gs = 0v, f = 1.0mhz - 2,80 2 - pf reverse transfer capacitance c rss - 37 - output capacitance c oss - 432 - turn - on delay time t d(on) v gs = 10v, v ds = 25 v, i d = 50 a , r g = 3.0 - 10.6 - ns rise time t r - 10.1 - turn - off delay time t d(off) - 32.5 - fall time t f - 11.9 - gate resistance rg f=1 mhz - 1.30 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 25 a, v gs = 0v - 0. 8 1.2 v body diode reverse recovery time t rr i f = 25 a, dl/dt = 15 0a/s - 57.6 ns body diode reverse recovery charge q rr - 138.5 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7). continuous current at t c =25 is silicon limited 2. e as is tested at starting tj = 25 , l = 1 . 0 mh, i as = 1 2 .0 a, v gs = 10v .
ju n . 20 1 5 . rev 1. 1 magnachip semiconductor ltd . 3 m d p 192 3 C single n - channel trench mosfet 100v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 60 70 80 notes : v gs = 0v t c = 25 i dr reverse drain current [a] v sd , source-drain voltage [v] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 15 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 notes : i d = 15a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 20 40 60 80 100 6 8 10 12 14 16 v gs = 10v drain-source on-resistance [m ? ] i d , drain current [a] 0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 90 100 7.0 v 8.0 v 10 v 5.0 v 6.0 v 4.5 v 4.0 v i d drain current [a] v ds , drain-source voltage [v] 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 v gs , gate-source voltage [v] t a =25 notes : v ds = 10v i d , drain current [a]
ju n . 20 1 5 . rev 1. 1 magnachip semiconductor ltd . 4 m d p 192 3 C single n - channel trench mosfet 100v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve fig. 12 breakdown voltage variation with temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -4 10 -3 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 40 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 0 2 4 6 8 10 v ds = 50v note : i d = 25a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 ms dc 100 us operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes : 1. v gs = 0 v 2. i d = 250 ua bv dss , (normalized) t j , junction temperature [ o c]
ju n . 20 1 5 . rev 1. 1 magnachip semiconductor ltd . 5 m d p 192 3 C single n - channel trench mosfet 100v package dimension 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
ju n . 20 1 5 . rev 1. 1 magnachip semiconductor ltd . 6 m d p 192 3 C single n - channel trench mosfet 100v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider respons ibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered tradema rk of magnachip semiconductor ltd.
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